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Samsung M3 93T5750CZA-CE6 2GB
Corsair CMD16GX4M2B2800C14 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Corsair CMD16GX4M2B2800C14 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Corsair CMD16GX4M2B2800C14 8GB

Corsair CMD16GX4M2B2800C14 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 13.3
    测试中的平均数值
Corsair CMD16GX4M2B2800C14 8GB 需要考虑的原因
Corsair CMD16GX4M2B2800C14 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 77
    左右 -235% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMD16GX4M2B2800C14 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 23
  • 读取速度，GB/s
    3,405.2 left arrow 18.0
  • 写入速度，GB/s
    2,622.0 left arrow 13.3
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3070

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Corsair CMD16GX4M2B2800C14 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
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Micron Technology 8ATF1G64HZ-2G6E3 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
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内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
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Corsair CMD64GX4M8B2800C14 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
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Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
V-Color Technology Inc. TC416G24D817 16GB
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内存RAM
Kingston HX316C10F/8 8GB
Kingston HX316C10F/8 8GB
Samsung M471B1G73BH0-CK0 8GB
Samsung M471B1G73BH0-CK0 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
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Wilk Elektronik S.A. GR2133S464L15/16G 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Corsair CMT16GX4M2Z3200C16 8GB
内存RAM
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
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Samsung M471A4G43AB1-CWE 32GB
内存RAM
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SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BLS8G4D32AESEK.M8FE 8GB
Crucial Technology BLS8G4D32AESEK.M8FE 8GB
内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
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Chun Well Technology Holding Limited D4U0832160B 8GB
内存RAM