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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 14.9
    测试中的平均数值
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB 需要考虑的原因
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 77
    左右 -185% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 27
  • 读取速度，GB/s
    3,405.2 left arrow 18.2
  • 写入速度，GB/s
    2,622.0 left arrow 14.9
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3510

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB RAM的比较

Kingston 9965669-018.A00G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Kingston 9905701-132.A00G 16GB
Kingston 9905701-132.A00G 16GB
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SK Hynix HYMP112U64CP8-S6 1GB
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Kingston 99U5474-023.A00LF 4GB
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Samsung M393B2G70BH0-CH9 16GB
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Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
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Kingston 9965596-019.B01G 4GB
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Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
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Golden Empire CL17-17-17 D4-2400 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Crucial Technology BLS8G4D240FSB.16FADG 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
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内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
Kingston KHX2133C13D4/8GX 8GB
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内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
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内存RAM
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Samsung M3 78T2863EHS-CF7 1GB
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Crucial Technology BLS8G4D26BFSE.16FD2 8GB
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