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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4SFS8266.C8FE 4GB

Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT4G4SFS8266.C8FE 4GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Crucial Technology CT4G4SFS8266.C8FE 4GB

Crucial Technology CT4G4SFS8266.C8FE 4GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    77 left arrow 166
    左右 54% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 14.7
    测试中的平均数值
Crucial Technology CT4G4SFS8266.C8FE 4GB 需要考虑的原因
Crucial Technology CT4G4SFS8266.C8FE 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.1 left arrow 2,622.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 166
  • 读取速度，GB/s
    3,405.2 left arrow 14.7
  • 写入速度，GB/s
    2,622.0 left arrow 8.1
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    763 left arrow 1107

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Crucial Technology CT4G4SFS8266.C8FE 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M3 93T5750CZA-CE6 2GB
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Crucial Technology CT4G4SFS8266.C8FE 4GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
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内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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内存RAM
Kingston KN2M64-ETB 8GB
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内存RAM
Kingston KHX16LC9/8GX 8GB
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内存RAM
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Avant Technology W6451U67J5213NB 4GB
内存RAM
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内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
SK Hynix HMA851S6JJR6N-VK 4GB
SK Hynix HMA851S6JJR6N-VK 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
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内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
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Samsung V-GeN D4S8GL24A8 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
内存RAM