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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT8G4SFD824A.C16FBD1 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 14.0
    测试中的平均数值
Crucial Technology CT8G4SFD824A.C16FBD1 8GB 需要考虑的原因
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 77
    左右 -157% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 30
  • 读取速度，GB/s
    3,405.2 left arrow 17.7
  • 写入速度，GB/s
    2,622.0 left arrow 14.0
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2834

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
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Corsair CMD32GX4M4C3200C14T 8GB
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V-Color Technology Inc. TL48G32S8KSRGB16 8GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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Kingston 9905678-110.A00G 8GB
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Corsair CMD16GX3M2A1866C9 8GB
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Corsair CMK32GX4M4K4133C19 8GB
Corsair CMK32GX4M4K4133C19 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-2400C17-4GFT 4GB
G Skill Intl F4-2400C17-4GFT 4GB
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G Skill Intl F3-2800C12-8GTXDG 8GB
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Team Group Inc. DDR4 3000 4GB
Team Group Inc. DDR4 3000 4GB
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Kingston 99U5474-038.A00LF 4GB
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Samsung M4 70T2953EZ3-CE6 1GB
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内存RAM
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Netac Technology Co Ltd E40832A 8GB
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内存RAM
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Kingston 9905469-143.A00LF 4GB
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Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Crucial Technology CT8G4DFD824A.C16FF 8GB
内存RAM
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Apacer Technology 78.01G86.9H50C 1GB
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