Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT8G4SFS824A.C8FDD1 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 15

测试中的平均数值
更快的写入速度，GB/s

2,622.0 10.8

测试中的平均数值

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FDD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 77

左右 -126% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 34
读取速度，GB/s

3,405.2 15.0
写入速度，GB/s

2,622.0 10.8
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

763 2516

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KHX8500D2K2/2GN 1GB

Kingston KHX8500D2K2/2GN 1GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

Crucial Technology CT51264BF160BJ.M8F 4GB

Crucial Technology CT51264BF160BJ.M8F 4GB

Kingston 9905713-030.A00G 8GB

Kingston 9905713-030.A00G 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

SK Hynix HMA41GR7MFR4N-TF 8GB

SK Hynix HMA41GR7MFR4N-TF 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Corsair CMT32GX4M2C3200C14 16GB

Corsair CMT32GX4M2C3200C14 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

G Skill Intl F4-4000C19-8GTZ 8GB

G Skill Intl F4-4000C19-8GTZ 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

V-GEN D4S8GL30A8TS5 8GB

V-GEN D4S8GL30A8TS5 8GB

G Skill Intl F4-2133C15-16GFT 16GB

G Skill Intl F4-2133C15-16GFT 16GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Kingston KHX21334D4/8G 8GB

Kingston KHX21334D4/8G 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

Corsair CMWX8GD3600C18W2D 8GB

Corsair CMWX8GD3600C18W2D 8GB