Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3200C15-8GTZKW 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-3200C15-8GTZKW 8GB

G Skill Intl F4-3200C15-8GTZKW 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 19.9

测试中的平均数值
更快的写入速度，GB/s

2,622.0 15.3

测试中的平均数值

G Skill Intl F4-3200C15-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-3200C15-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 77

左右 -328% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3200C15-8GTZKW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 18
读取速度，GB/s

3,405.2 19.9
写入速度，GB/s

2,622.0 15.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3421

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Wilk Elektronik S.A. GR2666S464L19/16G 16GB

Wilk Elektronik S.A. GR2666S464L19/16G 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Crucial Technology C 8GB

Crucial Technology C 8GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

A-DATA Technology AD4S320038G22-B 8GB

A-DATA Technology AD4S320038G22-B 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3200C15-8GTZKW 8GB

G Skill Intl F4-3200C15-8GTZKW 8GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

Team Group Inc. TEAMGROUP-UD4-3200 8GB

Team Group Inc. TEAMGROUP-UD4-3200 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Kingston 99U5700-032.A00G 16GB

Kingston 99U5700-032.A00G 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Panram International Corporation W4U2400PS-4G 4GB

Panram International Corporation W4U2400PS-4G 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingston M378A1K43CB2-CRC 8GB

Kingston M378A1K43CB2-CRC 8GB

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

Crucial Technology CT8G4DFRA32A.M8FR 8GB

Crucial Technology CT8G4DFRA32A.M8FR 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Samsung M471A5244BB0-CRC 4GB

Samsung M471A5244BB0-CRC 4GB

Kingston 9905471-006.A02LF 4GB

Kingston 9905471-006.A02LF 4GB

Corsair CMK64GX4M2E3200C16 32GB

Corsair CMK64GX4M2E3200C16 32GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Kingston 9905703-008.A00G 16GB

Kingston 9905703-008.A00G 16GB