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Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-4600C19-8GTZSWC 8GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
G Skill Intl F4-4600C19-8GTZSWC 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
22.3
测试中的平均数值
需要考虑的原因
G Skill Intl F4-4600C19-8GTZSWC 8GB
报告一个错误
低于PassMark测试中的延时,ns
16
77
左右 -381% 更低的延时
更快的写入速度,GB/s
21.2
2,622.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
16
读取速度,GB/s
3,405.2
22.3
写入速度,GB/s
2,622.0
21.2
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
763
3952
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
G Skill Intl F4-4600C19-8GTZSWC 8GB RAM的比较
Kingston 9965525-155.A00LF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264AC800.C16FC 4GB
Kingston KH280C14D4/8X 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMSX32GX4M2A3000C16 16GB
Samsung M393B1G70BH0-YK0 8GB
Samsung M378A1K43BB1-CPB 8GB
Kingston HP698651-154-MCN 8GB
Wilk Elektronik S.A. IR2400D464L15S/8G 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CM4X4GF2400C16K4 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Panram International Corporation D4N2400PS-8G 8GB
Kingston 99P5474-014.A00LF 4GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
AMD R5316G1609U2K 8GB
Corsair CMT64GX4M4Z3600C18 16GB
SK Hynix HMA84GR7AFR4N-UH 32GB
Samsung M393A4K40BB1-CRC 32GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M391A1G43EB1-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
PNY Electronics PNY 2GB
A-DATA Technology DDR4 3200 8GB
G Skill Intl F5-6000J3636F16G 16GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
Kingston ACR256X64D3S1333C9 2GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
报告一个错误
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Bug description
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