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Samsung M3 93T5750CZA-CE6 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
16.4
测试中的平均数值
更快的写入速度,GB/s
2,622.0
10.5
测试中的平均数值
需要考虑的原因
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
77
左右 -148% 更低的延时
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
31
读取速度,GB/s
3,405.2
16.4
写入速度,GB/s
2,622.0
10.5
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
763
3039
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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A-DATA Technology VDQVE1B16 2GB
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SK Hynix HYMP112U64CP8-S5 1GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Samsung M393B1G70QH0-YK0 8GB
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Ramos Technology RMB4GB58BCA3-13HC 4GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Kingston KF552C40-16 16GB
Corsair CMK32GX4M2A2666C16 16GB
G Skill Intl F5-5600J4040C16G 16GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F4-3200C16-32GTZN 32GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
报告一个错误
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