Samsung M4 70T2864EH3-CF7 1GB vs ASint Technology SSY2128M8-JGE3B 1GB

总分

Samsung M4 70T2864EH3-CF7 1GB

Samsung M4 70T2864EH3-CF7 1GB

总分

ASint Technology SSY2128M8-JGE3B 1GB

ASint Technology SSY2128M8-JGE3B 1GB

差异规格评论

差异

Samsung M4 70T2864EH3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864EH3-CF7 1GB

报告一个错误

低于PassMark测试中的延时，ns

70 92

左右 24% 更低的延时
更快的读取速度，GB/s

3 2

测试中的平均数值
更快的写入速度，GB/s

1,643.2 1,220.6

测试中的平均数值

ASint Technology SSY2128M8-JGE3B 1GB

需要考虑的原因
ASint Technology SSY2128M8-JGE3B 1GB

报告一个错误

规格

完整的技术规格清单

Samsung M4 70T2864EH3-CF7 1GB

ASint Technology SSY2128M8-JGE3B 1GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

70 92
读取速度，GB/s

3,279.9 2,032.4
写入速度，GB/s

1,643.2 1,220.6
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

454 289

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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