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Samsung M4 70T2864EH3-CF7 1GB
ASint Technology SSY2128M8-JGE3B 1GB

Samsung M4 70T2864EH3-CF7 1GB vs ASint Technology SSY2128M8-JGE3B 1GB

Overall score
star star star star star
Samsung M4 70T2864EH3-CF7 1GB

Samsung M4 70T2864EH3-CF7 1GB

Overall score
star star star star star
ASint Technology SSY2128M8-JGE3B 1GB

ASint Technology SSY2128M8-JGE3B 1GB

Differences Specifications Comments

Differences

Samsung M4 70T2864EH3-CF7 1GB Reasons to consider
Samsung M4 70T2864EH3-CF7 1GB
Report a bug
  • Below the latency in the PassMark tests, ns
    70 left arrow 92
    Around 24% lower latency
  • Faster reading speed, GB/s
    3 left arrow 2
    Average value in the tests
  • Faster write speed, GB/s
    1,643.2 left arrow 1,220.6
    Average value in the tests
ASint Technology SSY2128M8-JGE3B 1GB Reasons to consider
ASint Technology SSY2128M8-JGE3B 1GB
Report a bug

Specifications

Complete list of technical specifications
Samsung M4 70T2864EH3-CF7 1GB
ASint Technology SSY2128M8-JGE3B 1GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    70 left arrow 92
  • Read speed, GB/s
    3,279.9 left arrow 2,032.4
  • Write speed, GB/s
    1,643.2 left arrow 1,220.6
  • Memory bandwidth, mbps
    6400 left arrow 6400
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • Ranking PassMark (The more the better)
    454 left arrow 289

Samsung M4 70T2864EH3-CF7 1GB RAM comparisons

Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2864QZ3-CE6 1GB

ASint Technology SSY2128M8-JGE3B 1GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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