Samsung M3 93T5750CZA-CE6 2GB vs Kingston 9965596-019.B01G 4GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kingston 9965596-019.B01G 4GB

Kingston 9965596-019.B01G 4GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

Kingston 9965596-019.B01G 4GB

需要考虑的原因
Kingston 9965596-019.B01G 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 77

左右 -97% 更低的延时
更快的读取速度，GB/s

7.6 3

测试中的平均数值
更快的写入速度，GB/s

7.2 2,622.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kingston 9965596-019.B01G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 39
读取速度，GB/s

3,405.2 7.6
写入速度，GB/s

2,622.0 7.2
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

763 1868

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMH16GX4M2Z3600C18 8GB

Corsair CMH16GX4M2Z3600C18 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-4400C16-8GVK 8GB

G Skill Intl F4-4400C16-8GVK 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Kingston 9905622-075.A00G 8GB

Kingston 9905622-075.A00G 8GB

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

G Skill Intl F4-3000C14-16GVRD 16GB

G Skill Intl F4-3000C14-16GVRD 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

A-DATA Technology DDR4 3000 2OZ 8GB

A-DATA Technology DDR4 3000 2OZ 8GB

PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

SK Hynix HMT351S6BFR8C-H9 4GB

SK Hynix HMT351S6BFR8C-H9 4GB

Kingston 9905599-010.A00G 4GB

Kingston 9905599-010.A00G 4GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Crucial Technology BL16G32C16U4BL.M8FB1 16GB

Crucial Technology BL16G32C16U4BL.M8FB1 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston 9965596-019.B01G 4GB

Kingston 9965596-019.B01G 4GB

Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

Golden Empire CL18-20-20 D4-3200 8GB

Golden Empire CL18-20-20 D4-3200 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Patriot Memory (PDP Systems) 4266 C18 Series 8GB

Patriot Memory (PDP Systems) 4266 C18 Series 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Corsair CMW32GX4M2Z3600C14 16GB

Corsair CMW32GX4M2Z3600C14 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Corsair CMT64GX4M4Z3600C18 16GB

Corsair CMT64GX4M4Z3600C18 16GB