Samsung M3 93T5750CZA-CE6 2GB vs Kingston HP32D4U8D8HC-16XR 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kingston HP32D4U8D8HC-16XR 16GB

Kingston HP32D4U8D8HC-16XR 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 17.7

测试中的平均数值
更快的写入速度，GB/s

2,622.0 16.8

测试中的平均数值

Kingston HP32D4U8D8HC-16XR 16GB

需要考虑的原因
Kingston HP32D4U8D8HC-16XR 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 77

左右 -175% 更低的延时
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kingston HP32D4U8D8HC-16XR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 28
读取速度，GB/s

3,405.2 17.7
写入速度，GB/s

2,622.0 16.8
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

763 3811

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Essencore Limited IM48GU48N28-GGGHM 8GB

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Kingston HP32D4U8D8HC-16XR 16GB

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Kingston 9905403-061.A00LF 2GB

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Apacer Technology D12.2356WS.001 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston 9905458-017.A01LF 4GB

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Crucial Technology BLS16G4S240FSD.16FAD 16GB

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A-DATA Technology VDQVE1B16 2GB

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Crucial Technology BL8G30C15U4B.8FE 8GB

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Crucial Technology CT16G4SFD824A.M16FR 16GB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

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Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

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Kingston KP223C-ELD 2GB

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Samsung M386A8K40CM2-CRC 64GB

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Team Group Inc. Vulcan-1600 4GB

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Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

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SK Hynix HMAA1GS6CJR6N-XN 8GB

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Corsair CMSX32GX4M2A3200C22 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB