Samsung M378B5173QH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB

Samsung M378B5173QH0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB

总分
star star star star star
Samsung M378B5173QH0-CK0 4GB

Samsung M378B5173QH0-CK0 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB

差异

  • 更快的读取速度,GB/s
    13.9 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度,GB/s
    8.2 left arrow 6.9
    测试中的平均数值
  • 低于PassMark测试中的延时,ns
    29 left arrow 43
    左右 -48% 更低的延时

规格

完整的技术规格清单
Samsung M378B5173QH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时,ns
    43 left arrow 29
  • 读取速度,GB/s
    13.9 left arrow 12.2
  • 写入速度,GB/s
    8.2 left arrow 6.9
  • 内存带宽,mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2216 left arrow 2046
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较