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Samsung M378B5773SB0-CK0 2GB
Micron Technology 4ATF51264AZ-3G2E1 4GB

Samsung M378B5773SB0-CK0 2GB vs Micron Technology 4ATF51264AZ-3G2E1 4GB

总分
star star star star star
Samsung M378B5773SB0-CK0 2GB

Samsung M378B5773SB0-CK0 2GB

总分
star star star star star
Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

差异 规格 评论

差异

Samsung M378B5773SB0-CK0 2GB 需要考虑的原因
Samsung M378B5773SB0-CK0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 48
    左右 44% 更低的延时
Micron Technology 4ATF51264AZ-3G2E1 4GB 需要考虑的原因
Micron Technology 4ATF51264AZ-3G2E1 4GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 11
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M378B5773SB0-CK0 2GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 48
  • 读取速度，GB/s
    11.0 left arrow 17.5
  • 写入速度，GB/s
    8.0 left arrow 8.3
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1581 left arrow 2196

Samsung M378B5773SB0-CK0 2GB RAM的比较

Nanya Technology NT4GC64B8HG0NF-DI 4GB
Kingston 9905703-009.A00G 16GB

Micron Technology 4ATF51264AZ-3G2E1 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Samsung M471A5143EB1-CRC 4GB
内存RAM