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Samsung M391B5673EH1-CH9 2GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
比较
Samsung M391B5673EH1-CH9 2GB vs Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
总分
Samsung M391B5673EH1-CH9 2GB
总分
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
报告一个错误
更快的读取速度,GB/s
18.9
12.8
测试中的平均数值
更快的写入速度,GB/s
16.6
9.0
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
26
读取速度,GB/s
12.8
18.9
写入速度,GB/s
9.0
16.6
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2143
3866
Samsung M391B5673EH1-CH9 2GB RAM的比较
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B1G73AH0-CH9 8GB
Patriot Memory (PDP Systems) PSD34G13332 4GB
G Skill Intl F3-2666C12-8GTXD 8GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666
Samsung M391B5673EH1-CH9 2GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Corsair CMY16GX3M4A2133C8 4GB
Kingston 9905678-102.A00G 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3200C16-8GVGB 8GB
Kingston K1N7HK-ELC 2GB
Corsair CMD16GX4M2A2666C15 8GB
Samsung M393B2G70BH0-CK0 16GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Apacer Technology 78.C1GMW.AUC0B 8GB
Kingston 99U5471-012.A00LF 4GB
Kingston 9905712-016.A00G 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Micron Technology 18HTF12872AY-800F1 1GB
V-GEN D4H4GL26A8TS5 4GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BL16G32C16S4B.8FB 16GB
Kingston KVR533D2N4 512MB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
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Bug description
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