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Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB

Samsung M393B1G70BH0-CK0 8GB vs Crucial Technology BLS4G4D240FSA.8FAD 4GB

总分
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Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSA.8FAD 4GB

Crucial Technology BLS4G4D240FSA.8FAD 4GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
Crucial Technology BLS4G4D240FSA.8FAD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSA.8FAD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 51
    左右 -82% 更低的延时
  • 更快的读取速度，GB/s
    12.8 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.2 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 28
  • 读取速度，GB/s
    9.8 left arrow 12.8
  • 写入速度，GB/s
    8.1 left arrow 10.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 2545

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Crucial Technology BLS4G4D240FSA.8FAD 4GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Golden Empire CL17-17-17 D4-2400 16GB
Golden Empire CL17-17-17 D4-2400 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston MSI24D4S7D8MB-8 8GB
Kingston MSI24D4S7D8MB-8 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3200C14-8GTZ 8GB
G Skill Intl F4-3200C14-8GTZ 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
SK Hynix HMA81GU6AFR8N-UH 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CMW16GX4M2C3000C15 8GB
Corsair CMW16GX4M2C3000C15 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Neo Forza GKE160SO204808-3200 16GB
Neo Forza GKE160SO204808-3200 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Lenovo LMKU8G68AHFHD-32A 8GB
Lenovo LMKU8G68AHFHD-32A 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Kingston HP32D4S2S8ME-16 16GB
Kingston HP32D4S2S8ME-16 16GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Samsung M474A2K43BB1-CPB 16GB
Samsung M474A2K43BB1-CPB 16GB
内存RAM
Kingston HP32D4U2S8MR-8 8GB
Kingston HP32D4U2S8MR-8 8GB
Corsair CMT32GX4M2D3600C18 16GB
Corsair CMT32GX4M2D3600C18 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston HP24D4U7S8MBP-8 8GB
Kingston HP24D4U7S8MBP-8 8GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Kingston 9905630-005.A00G 8GB
Kingston 9905630-005.A00G 8GB
内存RAM