Samsung M393B1G70BH0-CK0 8GB vs Samsung M378A1K43CB2-CRC 8GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

Samsung M378A1K43CB2-CRC 8GB

Samsung M378A1K43CB2-CRC 8GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

Samsung M378A1K43CB2-CRC 8GB

需要考虑的原因
Samsung M378A1K43CB2-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 51

左右 -50% 更低的延时
更快的读取速度，GB/s

15.4 9.8

测试中的平均数值
更快的写入速度，GB/s

10.7 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

Samsung M378A1K43CB2-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 34
读取速度，GB/s

9.8 15.4
写入速度，GB/s

8.1 10.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2208 2739

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2666C18-4GRS 4GB

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Kingston K1N7HK-ELC 2GB

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A-DATA Technology DQKD1A08 1GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Kingston ACR512X64D3S13C9G 4GB

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Crucial Technology CT16G4DFD824A.C16FDD 16GB

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Corsair CMT32GX4M2C3600C18 16GB

Corsair CMT32GX4M2C3600C18 16GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB