Samsung M393B1G70BH0-CK0 8GB vs SK Hynix HMA451U7MFR8N-TF 4GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

SK Hynix HMA451U7MFR8N-TF 4GB

SK Hynix HMA451U7MFR8N-TF 4GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

SK Hynix HMA451U7MFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U7MFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 51

左右 -59% 更低的延时
更快的读取速度，GB/s

11.1 9.8

测试中的平均数值
更快的写入速度，GB/s

9.2 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

SK Hynix HMA451U7MFR8N-TF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 32
读取速度，GB/s

9.8 11.1
写入速度，GB/s

8.1 9.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2208 2449

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2666C18-8GRS 8GB

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Kingston 99U5584-005.A00LF 4GB

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Kingston ACR24D4U7D8MB-16 16GB

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Samsung M378B5273CH0-CH9 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston KHX2666C13D4/4GX 4GB

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Kingston KVR533D2N4 512MB

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Corsair CMK16GX4M1A2666C16 16GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Patriot Memory (PDP Systems) PSD416G26662 16GB

Patriot Memory (PDP Systems) PSD416G26662 16GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB

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Corsair CM2X1024-8500C5D 1GB

Kingston 9965589-024.D01G 16GB

Kingston 9965589-024.D01G 16GB