Samsung M393B1K70DH0-YK0 8GB vs Samsung M393B1K70DH0-CK0 8GB

总分

Samsung M393B1K70DH0-YK0 8GB

Samsung M393B1K70DH0-YK0 8GB

总分

Samsung M393B1K70DH0-CK0 8GB

Samsung M393B1K70DH0-CK0 8GB

差异规格评论

差异

Samsung M393B1K70DH0-YK0 8GB

需要考虑的原因
Samsung M393B1K70DH0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

48 49

左右 2% 更低的延时
更快的读取速度，GB/s

10.6 10.3

测试中的平均数值
更快的写入速度，GB/s

8.7 8.2

测试中的平均数值

Samsung M393B1K70DH0-CK0 8GB

需要考虑的原因
Samsung M393B1K70DH0-CK0 8GB

报告一个错误

规格

完整的技术规格清单

Samsung M393B1K70DH0-YK0 8GB

Samsung M393B1K70DH0-CK0 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

48 49
读取速度，GB/s

10.6 10.3
写入速度，GB/s

8.7 8.2
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2326 2230

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF1G64AZ-2G3A1 8GB

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G Skill Intl F3-2666C12-8GTXD 8GB

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Micron Technology 36ASF2G72PZ-2G3B1 16GB

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Samsung M393B5170FH0-CK0 4GB

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Corsair CMK8GX4M2B4200C19 4GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

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Kingston KHX1866C9D3/8GX 8GB

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G Skill Intl F4-2666C18-32GVK 32GB

G Skill Intl F4-2666C18-32GVK 32GB

Kingston KVR533D2N4 512MB

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SK Hynix HMA851U6AFR6N-UH 4GB

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AMD R744G2400U1S-UO 4GB

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Micron Technology 18ADF1G72PZ-2G1A1 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

G Skill Intl F4-3333C16-8GTZB 8GB

G Skill Intl F4-3333C16-8GTZB 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Kingston 9905624-014.A00G 4GB

Kingston 9905624-014.A00G 4GB

Samsung M3 78T2953EZ3-CF7 1GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Corsair CM4B8G2J3000K15K 8GB

Corsair CM4B8G2J3000K15K 8GB