Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-2400C17-4GVR 4GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

G Skill Intl F4-2400C17-4GVR 4GB

G Skill Intl F4-2400C17-4GVR 4GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

G Skill Intl F4-2400C17-4GVR 4GB

需要考虑的原因
G Skill Intl F4-2400C17-4GVR 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 54

左右 -116% 更低的延时
更快的读取速度，GB/s

15.2 9.2

测试中的平均数值
更快的写入速度，GB/s

12.0 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-2400C17-4GVR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 25
读取速度，GB/s

9.2 15.2
写入速度，GB/s

8.1 12.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2105 2740

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Patriot Memory (PDP Systems) PSD48G21332 8GB

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Corsair CMU64GX4M4C3000C15 16GB

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SpecTek Incorporated OP:71100 03/13 2M 8GB

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Kingston 9965662-016.A00G 16GB

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Kingston KHX2400C12D4/16GX 16GB

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Kingston 9905403-174.A00LF 2GB

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Kingston MSI24D4U7S8MH-8 8GB

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AMD R5316G1609U2K 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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G Skill Intl F4-3600C14-8GTZNB 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Crucial Technology BLS4G4D26BFSE.8FB 4GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Samsung M471A1K43DB1-CWE 8GB

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