Samsung M393B4G70EMB-CK0 32GB vs G Skill Intl F4-3000C16-16GSXWB 16GB

总分

Samsung M393B4G70EMB-CK0 32GB

Samsung M393B4G70EMB-CK0 32GB

总分

G Skill Intl F4-3000C16-16GSXWB 16GB

G Skill Intl F4-3000C16-16GSXWB 16GB

差异规格评论

差异

Samsung M393B4G70EMB-CK0 32GB

需要考虑的原因
Samsung M393B4G70EMB-CK0 32GB

报告一个错误

G Skill Intl F4-3000C16-16GSXWB 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GSXWB 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 66

左右 -120% 更低的延时
更快的读取速度，GB/s

17.5 7.3

测试中的平均数值
更快的写入速度，GB/s

12.9 6.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B4G70EMB-CK0 32GB

G Skill Intl F4-3000C16-16GSXWB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

66 30
读取速度，GB/s

7.3 17.5
写入速度，GB/s

6.6 12.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1760 3283

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMH32GX4M2E3200C16 16GB

Corsair CMH32GX4M2E3200C16 16GB

Samsung 16KTF1G64AZ-1G9P1 8GB

Samsung 16KTF1G64AZ-1G9P1 8GB

G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F4-4000C19-16GTZSW 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Transcend Information TS1GLH64V4B 8GB

Transcend Information TS1GLH64V4B 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Golden Empire CL14-16-16 D4-3000 4GB

Golden Empire CL14-16-16 D4-3000 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

Kingston ACR26D4S9D8MD-16 16GB

Kingston ACR26D4S9D8MD-16 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Avant Technology W642GU42J2320NH 16GB

Avant Technology W642GU42J2320NH 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB

V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB