Samsung M393B5170FH0-CH9 4GB vs Micron Technology 16ATF2G64HZ-2G6H1 16GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

Micron Technology 16ATF2G64HZ-2G6H1 16GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

Micron Technology 16ATF2G64HZ-2G6H1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6H1 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 49

左右 -48% 更低的延时
更快的读取速度，GB/s

14.7 10

测试中的平均数值
更快的写入速度，GB/s

8.8 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 33
读取速度，GB/s

10.0 14.7
写入速度，GB/s

8.2 8.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2116 2498

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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G Skill Intl F4-4000C18-8GTZKW 8GB

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Crucial Technology CT8G4DFS824A.C8FE 8GB

Crucial Technology CT8G4DFS824A.C8FE 8GB

Kingston 99U5471-020.A00LF 4GB

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Corsair CM4X4GD3000C16K2 4GB

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Kingston 9965433-034.A00LF 4GB

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Crucial Technology CT16G4SFD8213.C16FDD 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMR16GX4M2D3000C16 8GB

Corsair CMR16GX4M2D3000C16 8GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston 9905625-142.A00G 16GB