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Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB

Samsung M393B5170FH0-CK0 4GB vs Crucial Technology CT16G4DFD8266.C16FD1 16GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
Crucial Technology CT16G4DFD8266.C16FD1 16GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 34
    左右 21% 更低的延时
Crucial Technology CT16G4DFD8266.C16FD1 16GB 需要考虑的原因
Crucial Technology CT16G4DFD8266.C16FD1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 34
  • 读取速度，GB/s
    11.8 left arrow 16.2
  • 写入速度，GB/s
    7.3 left arrow 12.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 3135

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Crucial Technology BLT2G3D1608DT1TX0 2GB
ADVAN Inc AM42E28UD04T-NVL 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingmax Semiconductor GSAG42F-18---------- 8GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
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内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
SK Hynix HMA81GR7AFR8N-UH 8GB
SK Hynix HMA81GR7AFR8N-UH 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
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内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
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内存RAM
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takeMS International AG TMS2GB264D082-805G 2GB
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Samsung M471A1K43CB1-CRC 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9905712-010.A00G 16GB
Kingston 9905712-010.A00G 16GB
内存RAM
EVGA 16G-D3-1600-MR 8GB
EVGA 16G-D3-1600-MR 8GB
Kingston 9905702-119.A00G 8GB
Kingston 9905702-119.A00G 8GB
内存RAM
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Kingston ACR512X64D3S13C9G 4GB
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Lexar Co Limited LD4AS008G-H2666GST 8GB
内存RAM
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A-DATA Technology DQVE1908 512MB
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Samsung M378A5244CB0-CWE 4GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston 9905678-014.A00G 4GB
Kingston 9905678-014.A00G 4GB
内存RAM