Samsung M393B5170FH0-CK0 4GB vs Crucial Technology CT16G4DFRA266.C16FP 16GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Crucial Technology CT16G4DFRA266.C16FP 16GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

Crucial Technology CT16G4DFRA266.C16FP 16GB

需要考虑的原因
Crucial Technology CT16G4DFRA266.C16FP 16GB

报告一个错误

更快的读取速度，GB/s

15 11.8

测试中的平均数值
更快的写入速度，GB/s

10.4 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

11.8 15.0
写入速度，GB/s

7.3 10.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2057 2827

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4X16GC3000C16K4D 16GB

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Kingston 99U5474-010.A00LF 2GB

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Kingston X5H5PW-MIE 8GB

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A-DATA Technology DOVF1B163G2G 2GB

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A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

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G Skill Intl F4-3200C16-8GTZKW 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

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G Skill Intl F4-3200C14-32GTZR 32GB