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Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Samsung M393B5170FH0-CK0 4GB vs Crucial Technology CT8G4SFD8213.C16FBD1 8GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 36
    左右 25% 更低的延时
Crucial Technology CT8G4SFD8213.C16FBD1 8GB 需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 36
  • 读取速度，GB/s
    11.8 left arrow 14.0
  • 写入速度，GB/s
    7.3 left arrow 10.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 2416

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB RAM的比较

SK Hynix HYMP112U64CP8-S5 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
Samsung M393B5170FH0-CK0 4GB
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内存RAM
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Crucial Technology CT25664AA800.M16FG 2GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM