Samsung M393B5170FH0-CK0 4GB vs Kingston HP24D4U7S8MH-8 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Kingston HP24D4U7S8MH-8 8GB

Kingston HP24D4U7S8MH-8 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

Kingston HP24D4U7S8MH-8 8GB

需要考虑的原因
Kingston HP24D4U7S8MH-8 8GB

报告一个错误

更快的读取速度，GB/s

16.1 11.8

测试中的平均数值
更快的写入速度，GB/s

10.5 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Kingston HP24D4U7S8MH-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

11.8 16.1
写入速度，GB/s

7.3 10.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2057 2696

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS16G4D240FSE.16FD 16GB

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Micron Technology 4ATF1G64AZ-3G2E1 8GB

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A-DATA Technology AD4S320038G22-B 8GB

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Samsung M471B5173QH0-YK0 4GB

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Crucial Technology CT16G4SFD824A.M16FD1 16GB

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Strontium SRT8G86U1-P9H 8GB

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AMD R5316G1609U2K 8GB

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G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

Samsung T471A1K43CB1-CRC 8GB

Samsung T471A1K43CB1-CRC 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F3-1866C8-8GTX 8GB

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G Skill Intl F4-3300C16-16GTZKW 16GB

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Kingston 9905474-019.A00LF 2GB

G Skill Intl F4-4000C18-32GVK 32GB

G Skill Intl F4-4000C18-32GVK 32GB