Samsung M395T2863QZ4-CF76 1GB vs Kingston 9905744-005.A00G 16GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Kingston 9905744-005.A00G 16GB

Kingston 9905744-005.A00G 16GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 17.3

测试中的平均数值
更快的写入速度，GB/s

2,404.5 14.2

测试中的平均数值

Kingston 9905744-005.A00G 16GB

需要考虑的原因
Kingston 9905744-005.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 104

左右 -235% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Kingston 9905744-005.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 31
读取速度，GB/s

3,192.0 17.3
写入速度，GB/s

2,404.5 14.2
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 2949

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-CH9 8GB

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Mushkin MES4S213FF16G28 16GB

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Samsung M471B5173QH0-YK0 4GB

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Corsair CMT64GX4M4C3200C16 16GB

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Kingston 99U5429-007.A00LF 2GB

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Corsair CMW128GX4M4D3000C16 32GB

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Apacer Technology 78.CAGMR.ARC0B 8GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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Kingston KF552C40-16 16GB

Hewlett-Packard 7EH98AA#ABB 8GB

Hewlett-Packard 7EH98AA#ABB 8GB

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SK Hynix HMT351R7EFR8C-RD 4GB

Neo Forza NMUD480E82-2666 8GB

Neo Forza NMUD480E82-2666 8GB

OCZ OCZ2V8002G 2GB

OCZ OCZ2V8002G 2GB

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Kingston KVR800D2N6/2G 2GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Corsair CMK16GX4M2K4333C19 8GB

Corsair CMK16GX4M2K4333C19 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905678-121.A00G 8GB

Kingston 9905678-121.A00G 8GB