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Samsung M395T2863QZ4-CF76 1GB
Kingston KHX2133C15S4/8G 8GB

Samsung M395T2863QZ4-CF76 1GB vs Kingston KHX2133C15S4/8G 8GB

总分
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
Kingston KHX2133C15S4/8G 8GB

Kingston KHX2133C15S4/8G 8GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,404.5 left arrow 11.7
    测试中的平均数值
Kingston KHX2133C15S4/8G 8GB 需要考虑的原因
Kingston KHX2133C15S4/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 104
    左右 -285% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Kingston KHX2133C15S4/8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    104 left arrow 27
  • 读取速度，GB/s
    3,192.0 left arrow 15.2
  • 写入速度，GB/s
    2,404.5 left arrow 11.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    786 left arrow 2600

Samsung M395T2863QZ4-CF76 1GB RAM的比较

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

Kingston KHX2133C15S4/8G 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Kingston 9905625-096.A00G 16GB
Kingston 9905625-096.A00G 16GB
内存RAM
Crucial Technology BL8G24C16U4B.8FB 8GB
Crucial Technology BL8G24C16U4B.8FB 8GB
Kingston KF548C38-16 16GB
Kingston KF548C38-16 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology CB8GS2400.C8ET 8GB
Crucial Technology CB8GS2400.C8ET 8GB
内存RAM
Crucial Technology CT32G48C40U5.M16A1 32GB
Crucial Technology CT32G48C40U5.M16A1 32GB
A-DATA Technology AD5U48008G-B 8GB
A-DATA Technology AD5U48008G-B 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393A2K43BB1-CPB 16GB
Samsung M393A2K43BB1-CPB 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMK16GX4M4B3866C18 4GB
Corsair CMK16GX4M4B3866C18 4GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-4400C18-8GTRG 8GB
G Skill Intl F4-4400C18-8GTRG 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston K6VDX7-HYD 8GB
Kingston K6VDX7-HYD 8GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C
内存RAM