Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 4ATF1G64AZ-3G2E1 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 16.7

测试中的平均数值
更快的写入速度，GB/s

2,404.5 10.9

测试中的平均数值

Micron Technology 4ATF1G64AZ-3G2E1 8GB

需要考虑的原因
Micron Technology 4ATF1G64AZ-3G2E1 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 104

左右 -215% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 33
读取速度，GB/s

3,192.0 16.7
写入速度，GB/s

2,404.5 10.9
内存带宽，mbps

6400 25600

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

no data 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

786 2876

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C18-32GTZR 32GB

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PNY Electronics PNY 2GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

G Skill Intl F4-2133C15-4GVK 4GB

G Skill Intl F4-2133C15-4GVK 4GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

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Samsung M3 93T5750CZA-CE6 2GB

Kingston KHX3200C20S4/16GX 16GB

Kingston KHX3200C20S4/16GX 16GB