Samsung M395T5160QZ4-CE66 2GB vs Micron Technology 18ASF1G72AZ-2G1B1 8GB

总分

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

差异规格评论

差异

Samsung M395T5160QZ4-CE66 2GB

需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB

报告一个错误

Micron Technology 18ASF1G72AZ-2G1B1 8GB

需要考虑的原因
Micron Technology 18ASF1G72AZ-2G1B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 75

左右 -127% 更低的延时
更快的读取速度，GB/s

9.6 2

测试中的平均数值
更快的写入速度，GB/s

8.6 2,072.7

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M395T5160QZ4-CE66 2GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 33
读取速度，GB/s

2,730.3 9.6
写入速度，GB/s

2,072.7 8.6
内存带宽，mbps

5300 17000

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 2286

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF1G64AZ-2G3H1R 8GB