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Samsung M4 70T2864QZ3-CE6 1GB
Crucial Technology BLS8G4D32AESCK.M8FE 8GB

Samsung M4 70T2864QZ3-CE6 1GB vs Crucial Technology BLS8G4D32AESCK.M8FE 8GB

总分
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Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

总分
star star star star star
Crucial Technology BLS8G4D32AESCK.M8FE 8GB

Crucial Technology BLS8G4D32AESCK.M8FE 8GB

差异 规格 评论

差异

Samsung M4 70T2864QZ3-CE6 1GB 需要考虑的原因
Samsung M4 70T2864QZ3-CE6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.3
    测试中的平均数值
Crucial Technology BLS8G4D32AESCK.M8FE 8GB 需要考虑的原因
Crucial Technology BLS8G4D32AESCK.M8FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 65
    左右 -124% 更低的延时
  • 更快的写入速度，GB/s
    13.3 left arrow 1,574.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2864QZ3-CE6 1GB
Crucial Technology BLS8G4D32AESCK.M8FE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 29
  • 读取速度，GB/s
    3,858.9 left arrow 17.3
  • 写入速度，GB/s
    1,574.4 left arrow 13.3
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    607 left arrow 3294

Samsung M4 70T2864QZ3-CE6 1GB RAM的比较

Samsung M4 70T2864QZ3-CF7 1GB
Kingston KVR800D2S6/4G 4GB

Crucial Technology BLS8G4D32AESCK.M8FE 8GB RAM的比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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G Skill Intl F5-5600J4040C16G 16GB
Kingston HP32D4U8S8HC-8X 8GB
Kingston HP32D4U8S8HC-8X 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston XK2M26-MIE-NX 16GB
Kingston XK2M26-MIE-NX 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Golden Empire CL16-18-18 D4-2666 8GB
Golden Empire CL16-18-18 D4-2666 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-4400C19-8GTZSW 8GB
G Skill Intl F4-4400C19-8GTZSW 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
内存RAM
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT2K102464BD160B 8GB
Kingston 9905630-030.A00G 16GB
Kingston 9905630-030.A00G 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-2133C15-16GIS 16GB
G Skill Intl F4-2133C15-16GIS 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-2133C15-8GSQ 8GB
G Skill Intl F4-2133C15-8GSQ 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix HMA84GR7AFR4N-UH 32GB
SK Hynix HMA84GR7AFR4N-UH 32GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Apacer Technology 78.DAGRL.4050C 16GB
Apacer Technology 78.DAGRL.4050C 16GB
内存RAM
Kingston KF3600C18D4/16GX 16GB
Kingston KF3600C18D4/16GX 16GB
Kingston KHX3600C18D4/16GX 16GB
Kingston KHX3600C18D4/16GX 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-4000C17-16GTRGB 16GB
G Skill Intl F4-4000C17-16GTRGB 16GB
内存RAM