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Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology CT4G4DFS824A.M8FE 4GB

Samsung M4 70T2864QZ3-CF7 1GB vs Crucial Technology CT4G4DFS824A.M8FE 4GB

总分
star star star star star
Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分
star star star star star
Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

差异 规格 评论

差异

Samsung M4 70T2864QZ3-CF7 1GB 需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 12
    测试中的平均数值
Crucial Technology CT4G4DFS824A.M8FE 4GB 需要考虑的原因
Crucial Technology CT4G4DFS824A.M8FE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 74
    左右 -208% 更低的延时
  • 更快的写入速度，GB/s
    6.6 left arrow 2,201.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    74 left arrow 24
  • 读取速度，GB/s
    4,178.4 left arrow 12.0
  • 写入速度，GB/s
    2,201.1 left arrow 6.6
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    508 left arrow 1433

Samsung M4 70T2864QZ3-CF7 1GB RAM的比较

Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB RAM的比较

Samsung M3 93T5750CZA-CE6 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMSO4GX4M1A2133C15 4GB
Corsair CMSO4GX4M1A2133C15 4GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CMD32GX4M4B3200C16 8GB
Corsair CMD32GX4M4B3200C16 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CB8GU2400.C8JT 8GB
Crucial Technology CB8GU2400.C8JT 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
内存RAM
Samsung M4 70T5663QZ3-CF7 2GB
Samsung M4 70T5663QZ3-CF7 2GB
Corsair CMK8GX4M2A2800C16 4GB
Corsair CMK8GX4M2A2800C16 4GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Corsair CMD32GX4M4C3200C14T 8GB
Corsair CMD32GX4M4C3200C14T 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CMK16GX4M2Z3600C18 8GB
Corsair CMK16GX4M2Z3600C18 8GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM