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Samsung M4 70T2864QZ3-CF7 1GB
Gloway International (HK) STKD4XMP2400-F 4GB

Samsung M4 70T2864QZ3-CF7 1GB vs Gloway International (HK) STKD4XMP2400-F 4GB

总分
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Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分
star star star star star
Gloway International (HK) STKD4XMP2400-F 4GB

Gloway International (HK) STKD4XMP2400-F 4GB

差异 规格 评论

差异

Samsung M4 70T2864QZ3-CF7 1GB 需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,201.1 left arrow 11.4
    测试中的平均数值
Gloway International (HK) STKD4XMP2400-F 4GB 需要考虑的原因
Gloway International (HK) STKD4XMP2400-F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 74
    左右 -196% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2864QZ3-CF7 1GB
Gloway International (HK) STKD4XMP2400-F 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    74 left arrow 25
  • 读取速度，GB/s
    4,178.4 left arrow 15.2
  • 写入速度，GB/s
    2,201.1 left arrow 11.4
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    508 left arrow 2346

Samsung M4 70T2864QZ3-CF7 1GB RAM的比较

Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB

Gloway International (HK) STKD4XMP2400-F 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M4 70T2864QZ3-CF7 1GB
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内存RAM
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内存RAM
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内存RAM
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Patriot Memory (PDP Systems) PSD34G16002 4GB
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Micron Technology 18ASF2G72AZ-2G6D1 16GB
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