RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T2864QZ3-CF7 1GB
Panram International Corporation PUD43000C154G4NJW 4GB
比较
Samsung M4 70T2864QZ3-CF7 1GB vs Panram International Corporation PUD43000C154G4NJW 4GB
总分
Samsung M4 70T2864QZ3-CF7 1GB
总分
Panram International Corporation PUD43000C154G4NJW 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB
报告一个错误
更快的读取速度,GB/s
4
19.4
测试中的平均数值
更快的写入速度,GB/s
2,201.1
15.1
测试中的平均数值
需要考虑的原因
Panram International Corporation PUD43000C154G4NJW 4GB
报告一个错误
低于PassMark测试中的延时,ns
19
74
左右 -289% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Samsung M4 70T2864QZ3-CF7 1GB
Panram International Corporation PUD43000C154G4NJW 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
74
19
读取速度,GB/s
4,178.4
19.4
写入速度,GB/s
2,201.1
15.1
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
508
3314
Samsung M4 70T2864QZ3-CF7 1GB RAM的比较
Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB
Panram International Corporation PUD43000C154G4NJW 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Elpida EBJ40UG8EFU0-GN-F 4GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
King Tiger Technology Tigo-2400MHz-8G 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Panram International Corporation PUD43000C154G4NJW 4GB
Samsung M3 78T5663RZ3-CE6 2GB
AMD R948G3206U2S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Essencore Limited IM48GU88A30-FGGHMZ 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9905624-045.A00G 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
ISD Technology Limited IM48GU48N21-FFFHM 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMK192GX4M12P3200C16 16GB
Kingston SNY1600S11-4G-EDEG 4GB
Samsung M471B5273EB0-CK0 4GB
SK Hynix DDR2 800 2G 2GB
Samsung M393A4K40BB2-CTD 32GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-2666C18-32GVK 32GB
Kingston 9905403-447.A00LF 4GB
Micron Technology CT8G4DFD8213.16FA11 8GB
报告一个错误
×
Bug description
Source link