Samsung M4 70T5663CZ3-CE6 2GB vs A-DATA Technology AO1E34RCSV1-BF1S 16GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.8

测试中的平均数值

A-DATA Technology AO1E34RCSV1-BF1S 16GB

需要考虑的原因
A-DATA Technology AO1E34RCSV1-BF1S 16GB

报告一个错误

低于PassMark测试中的延时，ns

57 69

左右 -21% 更低的延时
更快的写入速度，GB/s

13.7 1,441.2

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 57
读取速度，GB/s

3,325.1 16.8
写入速度，GB/s

1,441.2 13.7
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

525 2792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18HTF12872AY-800F1 1GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

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Kingston 99U5474-010.A00LF 2GB

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Crucial Technology BL8G24C16U4B.8FD 8GB

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Kingston HP698651-154-MCN 8GB

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Crucial Technology BL16G32C16U4R.M16FE1 16GB

Crucial Technology BL16G32C16U4R.M16FE1 16GB