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Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
比较
Samsung M4 70T5663CZ3-CE6 2GB vs Crucial Technology BLE4G4D32AEEA.K8FE 4GB
总分
Samsung M4 70T5663CZ3-CE6 2GB
总分
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
22.9
测试中的平均数值
需要考虑的原因
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
69
左右 -165% 更低的延时
更快的写入速度,GB/s
17.7
1,441.2
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
69
26
读取速度,GB/s
3,325.1
22.9
写入速度,GB/s
1,441.2
17.7
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
525
3962
Samsung M4 70T5663CZ3-CE6 2GB RAM的比较
Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M393A4K40BB0-CPB 32GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston KP223C-ELD 2GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Kingston 9905403-134.A00LF 2GB
Corsair CMU32GX4M2A2400C14 16GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Apacer Technology 78.B1GN3.AZ32B 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
Kingston 9905702-010.A00G 8GB
Avexir Technologies Corporation T 4GB
报告一个错误
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Bug description
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