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Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-3200C14-8GTRG 8GB

Samsung M4 70T5663CZ3-CE6 2GB vs G Skill Intl F4-3200C14-8GTRG 8GB

总分
star star star star star
Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分
star star star star star
G Skill Intl F4-3200C14-8GTRG 8GB

G Skill Intl F4-3200C14-8GTRG 8GB

差异 规格 评论

差异

Samsung M4 70T5663CZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 20.4
    测试中的平均数值
G Skill Intl F4-3200C14-8GTRG 8GB 需要考虑的原因
G Skill Intl F4-3200C14-8GTRG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 69
    左右 -229% 更低的延时
  • 更快的写入速度，GB/s
    18.1 left arrow 1,441.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-3200C14-8GTRG 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 21
  • 读取速度，GB/s
    3,325.1 left arrow 20.4
  • 写入速度，GB/s
    1,441.2 left arrow 18.1
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    525 left arrow 4230

Samsung M4 70T5663CZ3-CE6 2GB RAM的比较

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

G Skill Intl F4-3200C14-8GTRG 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
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G Skill Intl F4-3200C14-8GTRG 8GB
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内存RAM
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NSITEXE Inc Visenta 16GB
内存RAM
Kingston KHX2666C16D4/16GX 16GB
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内存RAM
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内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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G Skill Intl F4-3333C16-16GTZB 16GB
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