Samsung M4 70T5663CZ3-CE6 2GB vs Virtium Technology Inc. VL33A1G63F-N6S 8GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 11.1

测试中的平均数值

Virtium Technology Inc. VL33A1G63F-N6S 8GB

需要考虑的原因
Virtium Technology Inc. VL33A1G63F-N6S 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 69

左右 -116% 更低的延时
更快的写入速度，GB/s

9.2 1,441.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 32
读取速度，GB/s

3,325.1 11.1
写入速度，GB/s

1,441.2 9.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

525 2386

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT8G4DFD824A.C16FDR2 8GB

Crucial Technology CT8G4DFD824A.C16FDR2 8GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

Crucial Technology BLS16G4D240FSB.16FD 16GB

Crucial Technology BLS16G4D240FSB.16FD 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Avant Technology J642GU42J5213NF 16GB

Avant Technology J642GU42J5213NF 16GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

ASint Technology SLZ302G08-MDJHB 2GB

ASint Technology SLZ302G08-MDJHB 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston HP37D4U1S8ME-8XR 8GB

Kingston HP37D4U1S8ME-8XR 8GB

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

Essencore Limited KD48GU880-26N160T 8GB

Essencore Limited KD48GU880-26N160T 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Samsung M378A2G43AB3-CWE 16GB

Samsung M378A2G43AB3-CWE 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

SK Hynix HMA851S6CJR6N-VK 4GB

SK Hynix HMA851S6CJR6N-VK 4GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

OCMEMORY OCM3200CL16D-16GBN 8GB

OCMEMORY OCM3200CL16D-16GBN 8GB

Kingston 99P5471-033.A00LF 8GB

Kingston 99P5471-033.A00LF 8GB

Wilk Elektronik S.A. W-HK26S16G 16GB

Wilk Elektronik S.A. W-HK26S16G 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F4-4000C19-16GTZSW 16GB