Samsung M4 70T5663QZ3-CE6 2GB vs Corsair CM4X16GE2933C19S2 16MB

总分

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分

Corsair CM4X16GE2933C19S2 16MB

Corsair CM4X16GE2933C19S2 16MB

差异规格评论

差异

Samsung M4 70T5663QZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 14.1

测试中的平均数值

Corsair CM4X16GE2933C19S2 16MB

需要考虑的原因
Corsair CM4X16GE2933C19S2 16MB

报告一个错误

低于PassMark测试中的延时，ns

32 68

左右 -113% 更低的延时
更快的写入速度，GB/s

13.9 1,702.6

测试中的平均数值

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CE6 2GB

Corsair CM4X16GE2933C19S2 16MB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 32
读取速度，GB/s

3,886.6 14.1
写入速度，GB/s

1,702.6 13.9
内存带宽，mbps

5300 no data

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 , 1.20000005, CAS Supported:
时序/时钟速度

5-5-5-15 / 667 MHz no data
排名PassMark (越多越好)

654 2918

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT151R7TFR4C-H9 4GB

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