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Samsung M4 70T5663QZ3-CE6 2GB
Kingston 9965640-001.C00G 16GB

Samsung M4 70T5663QZ3-CE6 2GB vs Kingston 9965640-001.C00G 16GB

总分
star star star star star
Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分
star star star star star
Kingston 9965640-001.C00G 16GB

Kingston 9965640-001.C00G 16GB

差异 规格 评论

差异

Samsung M4 70T5663QZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 10.1
    测试中的平均数值
Kingston 9965640-001.C00G 16GB 需要考虑的原因
Kingston 9965640-001.C00G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 68
    左右 -113% 更低的延时
  • 更快的写入速度，GB/s
    7.8 left arrow 1,702.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663QZ3-CE6 2GB
Kingston 9965640-001.C00G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 32
  • 读取速度，GB/s
    3,886.6 left arrow 10.1
  • 写入速度，GB/s
    1,702.6 left arrow 7.8
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    654 left arrow 2050

Samsung M4 70T5663QZ3-CE6 2GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Kingston 9965640-001.C00G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M4 70T5663QZ3-CE6 2GB
Samsung M4 70T5663QZ3-CE6 2GB
Kingston 9965640-001.C00G 16GB
Kingston 9965640-001.C00G 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Transcend Information JM3200HLB-16GK 8GB
Transcend Information JM3200HLB-16GK 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Kingston 9905625-075.A00G 16GB
Kingston 9905625-075.A00G 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston HP26D4S9S8ME-8 8GB
Kingston HP26D4S9S8ME-8 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD64GX4M4A2400C14 16GB
Corsair CMD64GX4M4A2400C14 16GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
KingSpec KingSpec 16GB
KingSpec KingSpec 16GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Kingston 99U5663-006.A00G 16GB
Kingston 99U5663-006.A00G 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT8G4SFS632A 8GB
Crucial Technology CT8G4SFS632A 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology BL16G32C16U4WL.M16FE 16GB
Crucial Technology BL16G32C16U4WL.M16FE 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-4266C19-32GTZR 32GB
G Skill Intl F4-4266C19-32GTZR 32GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-3200C16-8GTZ 8GB
G Skill Intl F4-3200C16-8GTZ 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Apacer Technology GD2.1527WE.001 8GB
Apacer Technology GD2.1527WE.001 8GB
内存RAM