Samsung M4 70T5663QZ3-CE6 2GB vs SK Hynix HYMP112S64CP6-Y5 1GB

总分

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分

SK Hynix HYMP112S64CP6-Y5 1GB

SK Hynix HYMP112S64CP6-Y5 1GB

差异规格评论

差异

Samsung M4 70T5663QZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB

报告一个错误

低于PassMark测试中的延时，ns

68 76

左右 11% 更低的延时
更快的读取速度，GB/s

3 3

测试中的平均数值
更快的写入速度，GB/s

1,702.6 1,482.6

测试中的平均数值

SK Hynix HYMP112S64CP6-Y5 1GB

需要考虑的原因
SK Hynix HYMP112S64CP6-Y5 1GB

报告一个错误

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CE6 2GB

SK Hynix HYMP112S64CP6-Y5 1GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

68 76
读取速度，GB/s

3,886.6 3,336.9
写入速度，GB/s

1,702.6 1,482.6
内存带宽，mbps

5300 5300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 667 MHz 5-5-5-15 / 667 MHz
排名PassMark (越多越好)

654 497

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT4G4SFS624A.C4FB 4GB

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Samsung M4 70T5663QZ3-CE6 2GB

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OCZ OCZ2SI8002G 2GB

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Kingston KHX1866C9D3/8GX 8GB

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A-DATA Technology DQVE1908 512MB

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Patriot Memory (PDP Systems) PSD44G240082 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMR32GX4M4C3333C16 8GB

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Team Group Inc. TEAMGROUP-SD4-2400 16GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB