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Samsung M4 70T5663QZ3-CE6 2GB
SK Hynix HYMP112S64CP6-Y5 1GB

Samsung M4 70T5663QZ3-CE6 2GB vs SK Hynix HYMP112S64CP6-Y5 1GB

Overall score
star star star star star
Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Overall score
star star star star star
SK Hynix HYMP112S64CP6-Y5 1GB

SK Hynix HYMP112S64CP6-Y5 1GB

Differences Specifications Comments

Differences

Samsung M4 70T5663QZ3-CE6 2GB Reasons to consider
Samsung M4 70T5663QZ3-CE6 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    68 left arrow 76
    Around 11% lower latency
  • Faster reading speed, GB/s
    3 left arrow 3
    Average value in the tests
  • Faster write speed, GB/s
    1,702.6 left arrow 1,482.6
    Average value in the tests
SK Hynix HYMP112S64CP6-Y5 1GB Reasons to consider
SK Hynix HYMP112S64CP6-Y5 1GB
Report a bug

Specifications

Complete list of technical specifications
Samsung M4 70T5663QZ3-CE6 2GB
SK Hynix HYMP112S64CP6-Y5 1GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    68 left arrow 76
  • Read speed, GB/s
    3,886.6 left arrow 3,336.9
  • Write speed, GB/s
    1,702.6 left arrow 1,482.6
  • Memory bandwidth, mbps
    5300 left arrow 5300
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 5-5-5-15 / 667 MHz
  • Ranking PassMark (The more the better)
    654 left arrow 497

Samsung M4 70T5663QZ3-CE6 2GB RAM comparisons

SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

SK Hynix HYMP112S64CP6-Y5 1GB RAM comparisons

Crucial Technology CT4G4DFS8266.C8FG 4GB
Nanya Technology NT1GT64U8HB0BN-3C 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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