Samsung M471A5143SB1-CRC 4GB vs G Skill Intl F4-3600C16-8GTZRC 8GB

总分

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

总分

G Skill Intl F4-3600C16-8GTZRC 8GB

G Skill Intl F4-3600C16-8GTZRC 8GB

差异规格评论

差异

Samsung M471A5143SB1-CRC 4GB

需要考虑的原因
Samsung M471A5143SB1-CRC 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 27

左右 11% 更低的延时
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-3600C16-8GTZRC 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTZRC 8GB

报告一个错误

更快的读取速度，GB/s

18.1 14.9

测试中的平均数值
更快的写入速度，GB/s

16.0 10.6

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A5143SB1-CRC 4GB

G Skill Intl F4-3600C16-8GTZRC 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 27
读取速度，GB/s

14.9 18.1
写入速度，GB/s

10.6 16.0
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2196 3672

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX3600C18D4/16GX 16GB

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Kingston 99U5469-045.A00LF 4GB

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Micron Technology 18ASF1G72PDZ-2G3A2 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Kingston KHX3000C15D4/4GX 4GB

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Samsung M393B2G70BH0-CH9 16GB

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Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Crucial Technology BLM16G44C19U4BL.M8FB 16GB

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Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

Crucial Technology CT8G4DFD824A.C16FBR2 8GB

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Kingston 9905458-017.A01LF 4GB

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Micron Technology 16ATF2G64AZ-2G6J1 16GB

Micron Technology 16ATF2G64AZ-2G6J1 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

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SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB