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Samsung M471A5644EB0-CPB 2GB
AMD R744G2133U1S 4GB

Samsung M471A5644EB0-CPB 2GB vs AMD R744G2133U1S 4GB

总分
star star star star star
Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

总分
star star star star star
AMD R744G2133U1S 4GB

AMD R744G2133U1S 4GB

差异 规格 评论

差异

Samsung M471A5644EB0-CPB 2GB 需要考虑的原因
Samsung M471A5644EB0-CPB 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 29
    左右 3% 更低的延时
  • 更快的写入速度，GB/s
    9.1 left arrow 8.8
    测试中的平均数值
AMD R744G2133U1S 4GB 需要考虑的原因
AMD R744G2133U1S 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13.8 left arrow 13.2
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A5644EB0-CPB 2GB
AMD R744G2133U1S 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 29
  • 读取速度，GB/s
    13.2 left arrow 13.8
  • 写入速度，GB/s
    9.1 left arrow 8.8
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1989 left arrow 2415

Samsung M471A5644EB0-CPB 2GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

AMD R744G2133U1S 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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内存RAM
Kingston 9905469-143.A00LF 4GB
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Corsair CM4X8GF2400C16K4 8GB
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内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
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内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
SK Hynix HMA81GR7AFR8N-UH 8GB
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内存RAM
Kingston 9905458-017.A01LF 4GB
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内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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G Skill Intl F4-3000C15-4GTZ 4GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
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内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
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G Skill Intl F4-3000C14-16GVK 16GB
内存RAM
Samsung M471A5644EB0-CPB 2GB
Samsung M471A5644EB0-CPB 2GB
AMD R744G2133U1S 4GB
AMD R744G2133U1S 4GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
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Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
内存RAM
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Samsung M3 78T5663RZ3-CE6 2GB
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Apacer Technology 78.DAGRL.4050C 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Essencore Limited KD4AGU880-36A180U 16GB
Essencore Limited KD4AGU880-36A180U 16GB
内存RAM