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Samsung M471B1G73QH0-YK0 8GB
Corsair CMK32GX4M2D3600C18 16GB

Samsung M471B1G73QH0-YK0 8GB vs Corsair CMK32GX4M2D3600C18 16GB

总分
star star star star star
Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分
star star star star star
Corsair CMK32GX4M2D3600C18 16GB

Corsair CMK32GX4M2D3600C18 16GB

差异 规格 评论

差异

Samsung M471B1G73QH0-YK0 8GB 需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB
报告一个错误
Corsair CMK32GX4M2D3600C18 16GB 需要考虑的原因
Corsair CMK32GX4M2D3600C18 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 47
    左右 -62% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73QH0-YK0 8GB
Corsair CMK32GX4M2D3600C18 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 29
  • 读取速度，GB/s
    11.8 left arrow 17.8
  • 写入速度，GB/s
    8.0 left arrow 14.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2061 left arrow 3597

Samsung M471B1G73QH0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB

Corsair CMK32GX4M2D3600C18 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905630-048.A00G 16GB
Kingston 9905630-048.A00G 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CM4X16GE2666C18S2 16GB
Corsair CM4X16GE2666C18S2 16GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Dust Leopard DDR4-2400 C17 8GB 8GB
Dust Leopard DDR4-2400 C17 8GB 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMK32GX4M2D3600C18 16GB
Corsair CMK32GX4M2D3600C18 16GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Corsair CMK32GX4M2E3200C16 16GB
Corsair CMK32GX4M2E3200C16 16GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMK32GX4M2A2400C16 16GB
Corsair CMK32GX4M2A2400C16 16GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-3200C16-8GTZR 8GB
G Skill Intl F4-3200C16-8GTZR 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CB8GU2400.C8ET 8GB
Crucial Technology CB8GU2400.C8ET 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Samsung M393A1G43DB0-CPB 8GB
Samsung M393A1G43DB0-CPB 8GB
内存RAM