Samsung M471B5273BH1-CF8 4GB vs Samsung M471B5773CHS-CF8 2GB

总分

Samsung M471B5273BH1-CF8 4GB

Samsung M471B5273BH1-CF8 4GB

总分

Samsung M471B5773CHS-CF8 2GB

Samsung M471B5773CHS-CF8 2GB

差异规格评论

差异

Samsung M471B5273BH1-CF8 4GB

需要考虑的原因
Samsung M471B5273BH1-CF8 4GB

报告一个错误

更快的读取速度，GB/s

7.6 5.7

测试中的平均数值
更快的写入速度，GB/s

6.6 3.0

测试中的平均数值

Samsung M471B5773CHS-CF8 2GB

需要考虑的原因
Samsung M471B5773CHS-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 36

左右 -24% 更低的延时

规格

完整的技术规格清单

Samsung M471B5273BH1-CF8 4GB

Samsung M471B5773CHS-CF8 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

36 29
读取速度，GB/s

7.6 5.7
写入速度，GB/s

6.6 3.0
内存带宽，mbps

8500 8500

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC3-8500, 1.5V, CAS Supported: 5 6 7 8
时序/时钟速度

7-7-7-20 / 1066 MHz 7-7-7-20 / 1066 MHz
排名PassMark (越多越好)

867 609

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Kingston 9965525-018.A00LF 4GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Corsair CMSA8GX3M2A1333C9 4GB

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Corsair CMX8GX3M2A1600C11 4GB

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Kingston KF3200C16D4/8GX 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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G Skill Intl F4-4000C16-8GVK 8GB

G Skill Intl F4-4000C16-8GVK 8GB