Samsung M471B5273DH0-CH9 4GB vs Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 47

左右 -81% 更低的延时
更快的读取速度，GB/s

18.6 9.3

测试中的平均数值
更快的写入速度，GB/s

16.2 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 26
读取速度，GB/s

9.3 18.6
写入速度，GB/s

5.9 16.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1413 3756

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18HTF12872AY-800F1 1GB

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G Skill Intl F4-3600C14-8GTZRA 8GB

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DSL Memory D4SH1G081SH26A-C 8GB

DSL Memory D4SH1G081SH26A-C 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMD16GX4M2B2800C14 8GB

Corsair CMD16GX4M2B2800C14 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9905624-008.A00G 8GB

Kingston 9905624-008.A00G 8GB