Samsung M471B5273DH0-CK0 4GB vs Micron Technology 36ASF4G72PZ-2G3B1 32GB

总分

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分

Micron Technology 36ASF4G72PZ-2G3B1 32GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

差异规格评论

差异

Samsung M471B5273DH0-CK0 4GB

需要考虑的原因
Samsung M471B5273DH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 52

左右 21% 更低的延时
更快的读取速度，GB/s

13.3 10

测试中的平均数值
更快的写入速度，GB/s

9.0 7.7

测试中的平均数值

Micron Technology 36ASF4G72PZ-2G3B1 32GB

需要考虑的原因
Micron Technology 36ASF4G72PZ-2G3B1 32GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CK0 4GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 52
读取速度，GB/s

13.3 10.0
写入速度，GB/s

9.0 7.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2016 2260

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Crucial Technology BLS16G4S240FSD.16FAD 16GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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SK Hynix HMT425S6CFR6A-PB 2GB

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Kingston 9905403-090.A01LF 4GB

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Kingston 9905678-139.A00G 8GB

Kingston 9905678-139.A00G 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Hewlett-Packard 7EH68AA# 16GB

Hewlett-Packard 7EH68AA# 16GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

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Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Kingmax Semiconductor GSLF62F-D8---------- 4GB

Kingmax Semiconductor GSLF62F-D8---------- 4GB