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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
比较
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Gold Key Technology Co Ltd NMUD480E86-3200 8GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
总分
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
差异
规格
评论
差异
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
27
左右 19% 更低的延时
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
报告一个错误
更快的读取速度,GB/s
19.5
17.7
测试中的平均数值
更快的写入速度,GB/s
15.0
12.7
测试中的平均数值
规格
完整的技术规格清单
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
22
27
读取速度,GB/s
17.7
19.5
写入速度,GB/s
12.7
15.0
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
3075
3631
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM的比较
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB RAM的比较
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B2G70BH0-CK0 16GB
Corsair CM4X4GD3000C15K4 4GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Apacer Technology 78.BAGN8.40C0B 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Samsung M395T5160QZ4-CE66 2GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
Corsair CML16GX3M2A1600C10 8GB
G Skill Intl F4-3600C18-8GTRS 8GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3333C16-8GVR 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston ASU21D4U5S8MB-8 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3600C14-16GTZRA 16GB
Crucial Technology BLS4G3D1609DS1S00. 4GB
Kingston 99U5702-095.A00G 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston CBD32D4S2S1ME-8 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3600C14-8GVKA 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Samsung M393A5143DB0-CPB 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-4400C18-8GTZRC 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
报告一个错误
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Bug description
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