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SK Hynix HMT351R7EFR8C-RD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
比较
SK Hynix HMT351R7EFR8C-RD 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
总分
SK Hynix HMT351R7EFR8C-RD 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT351R7EFR8C-RD 4GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
37
左右 -48% 更低的延时
更快的读取速度,GB/s
14.6
9.8
测试中的平均数值
更快的写入速度,GB/s
9.9
7.2
测试中的平均数值
更高的内存带宽,mbps
19200
14900
左右 1.29 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT351R7EFR8C-RD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
25
读取速度,GB/s
9.8
14.6
写入速度,GB/s
7.2
9.9
内存带宽,mbps
14900
19200
Other
描述
PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-10-9-28 / 1866 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2065
2427
SK Hynix HMT351R7EFR8C-RD 4GB RAM的比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMT351R7EFR4A-H9 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB RAM的比较
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston KP223C-ELD 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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A-DATA Technology DDR4 2400 16GB
G Skill Intl F4-3600C18-8GTZRX 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
Mushkin 991988 (996988) 4GB
Corsair CMK32GX4M2B3200C16 16GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3000C16-8GSXFB 8GB
Corsair CM2X1024-8500C5D 1GB
Avant Technology J641GU42J5213N0 8GB
Kingston 9905316-106.A02LF 1GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3600C16-8GTZKW 8GB
AMD R538G1601U2S-UO 8GB
Corsair CMK64GX4M2A2666C16 32GB
报告一个错误
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Bug description
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